Design
of Single Stage Transistor Amplfier and RF Oscillator
Diagram
Design
parameters
Transistor available = 2 SC
828 ( general purpose low power )
b =
200 fT = 400 MHz
Vcc =
12 VDC
Vce
(quiescent) = 6 V VE = 0.5 V
IE =
IC = 0.5 mA RE = VE / IE =
0.5 / 0.5 = 1 k ohm
RC
= (Vcc - Vc ) / IC = (12 –
6) / 0.5 = 12 k ohm
IB =
IC / b = 0.5 /
200 = 2.5 uA
I
PD >> IB = 40 x IB = 0.1
mA
R1
= ( VCC - VB ) / IPD = (12 –
1.1 ) / 0.1 = 109 k ohm
R2 =
VB / IPD = 1.1 / 0.1 = 11 k ohm
re’ =
25 mV/ IC = 25 x 10-3 / 0.5 x 10-3
= 50 ohm
Av
(max) = RC / re’ = 12000 / 50 = 240
rb
= b re’ = 200
x 50 = 10000 = 10 k ohm
rin
= rb || R1 || R2 = 5.0 k ohm
rs
= 1k then V / Vs = rin / ( rin
+ rs ) = 5 / 6 = 0.8
Av
= Avmax x V / VS = 190
Design
of Colpitts L-C oscillator
Coil
design
Length
( l ) = 6 cm = 6 x 10-2 m
Diameter
= 1 cm Radius ( r ) = 5.0 x 10-3 m
No
of Turns ( N ) = 100
Inductance
( L ) = uo N2 p
r2 / l = 2.0 x 10-6 H
Capacitors
to be used = 3.3 nF
Since
2 capacitors are in series total capacity (Ct) = 3.3 / 2 = 1.65
nF
Operating
frequency ( f ) = ( 4 p2
x L x Ct ) -1/2
f =
2.8 MHz
By-pass
Capacitor for RE ( CE ) >> 1 / 2 p
f RE = 200 / ( 2 p
x 2.88 x 106 x 1000 ) = 10 nF
Actual
components to be used
Rc =
10 k ohm RE = 1 k ohm R1 = 100 k ohm R2
= 10 k ohm
CE
= 10 nF
Observations
Vc
= Vb =
VE
=
f
=
Amplitude
Modulation
Note1: p in some relations is Greek pi = 3.14
Note2: Information given without any liability.
Fayyaz
Mahmood